József Attila Tudományegyetem Természettudományi kar - tanácsülések, 1986-1987
1987. március 13., III. rendes ülés
3 2. Gy. Papp: '.Volfs be rg-He Imhol tz Calculations on Fe(phen)TM 2 f ^ and Fe( phen-(OH),,) 2 ‘ complexes. Acta Phys . et Chem. 20 13 /1974/ 3. I. K. Gyémánt, M. G. Benedict, Gy. Papp and B. Vasvári: Multiple scattering X treatment of scattering states of clusters. Acta Phys. et Chem. 22 3 /1976/ 4. G. Papp and I. Gyémánt: Binding energies of transition metal impurities in Aluminium. Acta Phys. et Chou 24 353 /1978/ 5. G. Papp and F. Beleznay: Mean value point and vacancy induced deep level in Si and some III-V semiconductors Conference Abstract Defects of Complexed in semiconductors structures /1982/ 6. G. Papp and F. Beleznay: Changing in the density of states caused by vacancy in GaP and InP. Acta Phys. et Chem. XXIX/1-2. /1933/. 7. P. Boguslavvski, G. Papp and A. Baldereschi: Self intersticial in Si. Holv. Phys. Acta. /1933/ 8. P. Boguslavvski, G. Papp and A. Baldereschi: Self intersticial impurities in Si. Conf. Abstracts of the III. Gen. Conf. of the CMD-EPS, p. 256 /1983/ 9. G, Papp, F. Beleznay: Pepresentativ points and vacancy induced deep level in Si and some III-V. semiconductors, Acta Phys. et Chem. XXX. /1984/ 10. P. Boguslavvski, G. Papp, A. Baldereschi: Self intersticial impurity along the tetrahedral-hexagonal path in Si. Conf. Abstracts of the IV. Gen. Conf. of the CMD-EPS /1934/ 11. P. Boguslavvski, G. Papp, A. Baldereschi: Tetrahedral-site vs hexagonal-site seif-intersticial in Silicon, Solid State Commun. 52, /1984/ 12. E. Kiihnel, G. Papp: Statistical Phenomena ( u.S Konference Balatonalmádi, 1905). 13. Papp György: Ponthibák elektronszerkezetének elméleti vizsgálata félvezetőkben. Kandidátusi értekezés Szeged, 1985 .
