József Attila Tudományegyetem Természettudományi kar - tanácsülések, 1987-1988

1987. március 4., II. rendes ülés

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G. Fanp, P.Bele ,:nny: Changing in ián lonsity of states caused

by vacancy in Or-P a ad In?

Ac tü nuys. o o Cuem.

KIK/;-2. 1983

P. Bogus lawsk’i, G. Papa, A. Baldereschi: Self inter3>icial in Si Ilelv. I’nys. Acta 1.983

P. Bog us laws lei, G. T,app, A. Baldereschi: Golf intersticial impurities in Si

Conf. Abstracts of the III. Gen.Conf.of the CI.1D-2PS p. 256 1983

G.Pane, E.'v Beleznay: Repreoentativ points and vacancy induced O deep level in Si and some III-V. semiconductors Acta Bays, et Chem. XXX. 1984

P. Boguslav/ski, G. Papp , A. Baldereschi: Self intersticial

impurity a Ion" the te Irahedral-licxagonal path in Si Conf. Abstracts of the IV. Gen. Conf. of the CI.TD-3P3 1984

P. Boguslawski, G. Papn; A. Baldereschi: Tetrahedral-site vs hexagonal-site self-intersticial in Silicon,

Solid Sia e Conmun, 58, 1984

1 . Kühnei, G.Bann: Statistical 'An icna / >o.S Conference,----.— t 1

1 J. . . ^ -| . . Tg 4 “) Q n r /

JLci cl '.. 1-L jL J —. ' vJ J /

Papn Gy.: ’Vr' hi' ’1: e 1 e k t r ons z e rke a ebének elméleti vizsgálata f elverne iőleben Kandidátusi értekezés, Szeged, 1985.

G.Pnpp, P.Boguslawski,A.Baldereschi: Electron energy of hexagonal site self-interstitial in Si Acta Phys. et Chem., Szeged, 32, 9 /19S6/

G. Pane, P.Boguslawski, A.Baldereschi: Changing in charge dénsity of Si caused by hexagonal site self-interstitial Acta Phys. et Chem, Szeged, 33, 3 /1987/

G.Pane, P.Boguslawslci, A.Baldercshi: Hexagonal site interstitials related states in silicon /megjelenőben/

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